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New Step by Step Map For silicon carbide direct heating epitaxial graphene

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To further more boost its SiC technology, Infineon invested quite a bit into testing on-state oxide reliability of electrically screened SiC MOSFETs and also the off state oxide stress a result of the electric field disorders in SiC power devices. Just one of these specific properties is that gate oxides https://x.com/hongyuxin20/status/1818535565337272483

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